Circuit protection manufacturers boost performance and deliver smaller footprints for applications ranging from vehicles to ...

A study in Nature describes both the mechanism and the material conditions necessary for superfluorescence at room ...

Superconductivity is an advantageous property observed in some materials, which entails an electrical resistance of zero at ...

Research and development on III-nitride semiconductors gained momentum much later than other conventional semiconductors such as silicon and gallium arsenide. This was due to the difficulty in ...

Abstract: Demonstration of a 2.5-kV diamond diode is provided by electrical measurements using a circular gold Schottky contact, with an area >1 mm/sup 2/, on large area freestanding single-crystal ...

Institute of Physics, Martin Luther University Halle-Wittenberg, 06120 Halle (Saale), Germany Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle (Saale), Germany Article Views are ...

Large-area (1075 × 750 μm 2) blue-emitting InGaN/GaN light-emitting diodes (LEDs) fabricated on a 3 μm pitch CES exhibit ∼39% enhancement in the optical power compared to state-of-the-art, ...

Abstract: We have fabricated Super Junction (SJ) p-n diodes by our previously proposed defect-less trench filling technique with pre- and post-annealing in H/sub 2/. The trench filling technique has ...

NEW YORK, NEW YORK – MAY 05: (Exclusive Coverage) (L-R) Swizz Beatz, Alicia Keys, Met Gala Co-Chair A$AP Rocky and Rihanna attend the 2025 Met Gala Celebrating ...