Abstract: This brief investigates the random grain-boundary (GB)-induced variability in poly-crystalline silicon thin-film transistor for stackable NAND flash applications using 3-D Voronoi grain ...

However, another important implication of using TFT devices is that the Vt variation induced by randomly distributed grain boundaries degrades the array performance. In this paper, an extensive TCAD ...

A pest management expert says crop farmers should prioritize insect control in their stored grain. Miya Butler with Central ...