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Tom's Hardware on MSN14h
AI chip boom sparks BT substrate materials shortage — TSMC's huge demand causes supply disruptions for NAND flash controllers, SSDs
TSMC's demand for CoWoS material has cascaded to impact suppliers of BT substrate base materials, causing the memory market ...
DIGITIMES1d
TSMC's CoWoS boom squeezes substrates, stirs NAND pricing
Mitsubishi Gas Chemical (MGC), the world's leading supplier of BT substrate base materials, has notified clients of delayed ...
IEEE2d
A Pattern Adaptive NAND Flash Memory Storage Structure
The structure primarily consists of a write cache and a flash translation layer that separates groups of writes by access pattern (S-FTL). Separately managing the two types of write patterns enables ...
IEEE3d
Ferroelectric (Fe)-NAND Flash Memory With Batch Write Algorithm and Smart Data Store to the Nonvolatile Page Buffer for Data Center Application High-Speed and Highly Reliable ...
Abstract: A ferroelectric (Fe)-NAND flash memory with a batch write algorithm and a smart data store to the nonvolatile page buffer is proposed. An enterprise solid-state drive (SSD) for a data center ...
kedglobal4d
Samsung to produce 290-layer V9 NAND to win chip stacking war
Samsung Electronics Co., the world’s largest memory chipmaker, is set to begin mass production of 290-layer ninth-generation vertical (V9) NAND chips later this month to lead rivals in the industry’s ...
Fudzilla5d
SK hynix stacks 321-layer NAND for AI boost
Thinner, faster UFS 4.1 lands in 2026 SK hynix is doubling down on its love affair with stacking things high by stuffing 321 ...
3D X-DRAM technology will bring bigger, faster memory by 2026, but there's no way these 512GB modules will sell to consumers
The company compares its 3D X-DRAM density to the current 0a-node planar DRAM’s 48GB and claims to reach 512GB, but the ...