Infineon Technologies AG has introduced what it claims is the world’s first gallium nitride (GaN) power transistor with an integrated Schottky diode.

Medium-voltage CoolGaN G5 transistors from Infineon include a built-in Schottky diode to minimize dead-time losses.

The high-performance SiC diodes are also notable for their low reverse leakage (IR) at 20µA (max.) which minimises heat ...

Diodes Incorporated ... for high-efficiency power switching applications, such as DC to DC and AC to DC conversion, renewable ...

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky ...

Ideal for use in photovoltaic systems, charging stations, industrial UPS, and telecom power supplies, these diodes’ low capacitive charges—down to 56 nC—enable high-speed switching in ...

For hard-switched power topologies, Infineon is planning a 100V GaN transistors with a integrated Schottky diode. "Due to the ...

Diodes Incorporated (Diodes) (Nasdaq: DIOD) today announces the expansion of its silicon carbide (SiC) product portfolio with a series of five high-performance, low figure-of-merit (FOM) 650V SiC ...

Infineon Technologies AG has released the world's first GaN power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN Transistors G5 with ...

Engineered to reduce reverse conduction losses and eliminate dead-time penalties, this innovation enables higher performance across applications like telecom, servers, DC-DC converters, USB-C chargers ...