Infineon Technologies AG has introduced what it claims is the world’s first gallium nitride (GaN) power transistor with an integrated Schottky diode.

Accordany to the company, the family of medium-voltage CoolGaN Transistors G5 with integrated Schottky diode increases the ...

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky ...

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky ...

Infineon Technologies has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode ...

Infineon introduces first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use.

Engineered to reduce reverse conduction losses and eliminate dead-time penalties, this innovation enables higher performance across applications like telecom, servers, DC-DC converters, USB-C chargers ...

The high-performance SiC diodes are also notable for their low reverse leakage (IR) at 20µA (max.) which minimises heat ...

The power chips offer faster speed, smaller size, and better performance made for smart TVs, laptops, home devices, EV ...

Diodes Incorporated (Diodes) (Nasdaq: DIOD) today announces the expansion of its silicon carbide (SiC) product portfolio with a series of five high-performance, low figure-of-merit (FOM) 650V SiC ...

Diodes Incorporated has expanded its SiC product portfolio with a series of five high-performance, low figure-of-merit (FOM) ...

BASiC Semiconductor’s SiC MOSFET modules redefine performance benchmarks for industrial and commercial energy storage PCS. With unmatched efficiency, thermal resilience, and system-level cost savings, ...