Infineon Technologies AG has introduced what it claims is the world’s first gallium nitride (GaN) power transistor with an integrated Schottky diode.

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky ...

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky ...

Infineon Technologies has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode ...

Engineered to reduce reverse conduction losses and eliminate dead-time penalties, this innovation enables higher performance across applications like telecom, servers, DC-DC converters, USB-C chargers ...

The high-performance SiC diodes are also notable for their low reverse leakage (IR) at 20µA (max.) which minimises heat ...

Diodes Incorporated (Diodes) (Nasdaq: DIOD) today announces the expansion of its silicon carbide (SiC) product portfolio with a series of five high-performance, low figure-of-merit (FOM) 650V SiC ...

Diodes Incorporated has expanded its SiC product portfolio with a series of five high-performance, low figure-of-merit (FOM) ...

Highlights of ROHM's presence at PCIM 2025 include: ...

Taiwan Semi’s latest single- and dual-output, automotive-grade devices offer what’s claimed as the industry’s best figure of ...

Lighting is no longer just a matter of visibility. It’s about ambiance, efficiency, style, and sustainability. One of the ...