Infineon Technologies AG has introduced what it claims is the world’s first gallium nitride (GaN) power transistor with an integrated Schottky diode.

Medium-voltage CoolGaN G5 transistors from Infineon include a built-in Schottky diode to minimize dead-time losses.

Ideal for use in photovoltaic systems, charging stations, industrial UPS, and telecom power supplies, these diodes’ low capacitive charges—down to 56 nC—enable high-speed switching in ...

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky ...

It is the second course in the "Semiconductor Power Device" specialization that focusses on diodes, MOSFETs, and IGBTs but also covers legacy devices (BJTs, Thyristors and TRIACS) as well as ...

The power chips offer faster speed, smaller size, and better performance made for smart TVs, laptops, home devices, EV chargers, and machines.

For hard-switched power topologies, Infineon is planning a 100V GaN transistors with a integrated Schottky diode. "Due to the ...

Infineon Technologies AG has released the world's first GaN power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN Transistors G5 with ...

Engineered to reduce reverse conduction losses and eliminate dead-time penalties, this innovation enables higher performance across applications like telecom, servers, DC-DC converters, USB-C chargers ...