Abstract: A generalized 2-D analytical model of gate threshold voltage for multiple material gate Tunneling FET (TFET) structures is derived. The model can also be used for calculating threshold ...

Toshiba has released four 650-V third-generation SiC MOSFETs in compact 8×8-mm DFN packages. The surface-mount DFN reduces ...

Abstract: In this letter, we analyzed the gate capacitance characteristics in p-GaN gate/AlGaN/GaN heterostructures by using a two-junction capacitor model. First, we have observed that the C-V ...