On March 22, the JFS Laboratory research team in Wuhan, Hubei province, announced the world’s first successful fabrication of 8-inch N-polar GaN-on-insulator (GaNOI) wafers on silicon substrate.

On March 24, 2025, Jiufengshan Laboratory (JFS) announced two major breakthroughs in GaN technology: the world's first 8-inch silicon-based N-polar gallium nitride on insulator (GaNOI) material ...

On March 22, the JFS Laboratory research team in Wuhan, Hubei province, announced the world's first successful fabrication of 8-inch N-polar GaN-on-insulator (GaNOI) wafers on silicon substrate.