Abstract: In this letter, we analyzed the gate capacitance characteristics in p-GaN gate/AlGaN/GaN heterostructures by using a two-junction capacitor model. First, we have observed that the C-V ...

Abstract: Four types of GaN-based light-emitting diodes (LEDs) with V-pits formed in different regions were grown by metal-organic chemical vapor deposition. The position of the V-pits embedded in the ...