Researchers from Singapore’s Nanyang Technological University and its Agency for Science, Technology and Research are ...
Abstract: This work investigates the response of specially developed silicon p-i-n diodes with a long base as sensors to measure displacement damage dose (DDD) in silicon. Measurements of DDD are ...
State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China School of Applied Chemistry and Engineering, ...
Neutron Science Division, Korea Atomic Energy Research Institute, 111 Daedeok-daero 989 Beon-Gil, Yuseong-gu, Daejeon, 34057, Republic of Korea ...
Abstract: A novel AlGaN/GaN Schottky barrier diode (SBD) thermal sensor featuring a recessed anode and a thin Al0.25Ga0.75N barrier layer is fabricated, which is demonstrated to have ultralow power, ...
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