EPC aims to displace silicon mosfets from secondary-side synchronous rectifiers with its latest 40V GaN power transistor, ...

Beijing National Laboratory for Molecular Sciences, National Biomedical Imaging Center, College of Chemistry and Molecular Engineering, Peking University, 292 Chengfu Road, Haidian District, Beijing ...

School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072, China Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China ...

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN ...

Infineon Technologies AG has announced the release of the world’s first industrial-grade gallium nitride (GaN) transistor family featuring an integrated Schottky diode. The new CoolGaN Transistor G5 ...

For hard-switched power topologies, Infineon is planning a 100V GaN transistors with a integrated Schottky diode. “Due to the lack of body diode in hard-switching applications, GaN-based topologies ...

In this tutorial, we will study the behavior of a diode reverse-biased by a Dirac pulse, subsequently considering the special (and unpublished) case of a Zener diode. In this tutorial, we will study ...

Image: Paradis A reservation at Roux 30A is more than a meal; it’s an experience. Chef Nikhil Abuvala’s intimate, reservation-only dining room hosts a multi-course tasting menu that blends Southern ...

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN ...