Abstract: In this work, a novel 4F 2 VCT (vertical channel transistor) targeting for next generation of DRAM is proposed. We approached process feasibility and device performance of $\mathbf{4 F}^{2}$ ...
Abstract: Current status and future prospects of GaN vertical power devices fabricated on GaN substrates are presented. Fundamental material properties of GaN related to vertical power devices, ...
Electric vehicle takeoff and landing (eVTOL) developer Vertical Aerospace has announced that it has completed its third and final full-scale prototype aircraft and will start piloted flight testing ...
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