The structure primarily consists of a write cache and a flash translation layer that separates groups of writes by access pattern (S-FTL). Separately managing the two types of write patterns enables ...

Thinner, faster UFS 4.1 lands in 2026 SK hynix is doubling down on its love affair with stacking things high by stuffing 321 ...

The company compares its 3D X-DRAM density to the current 0a-node planar DRAM’s 48GB and claims to reach 512GB, but the ...

PLL-less PHY IP complements the existing digital NAND Flash controller for a complete ASIC implementation of an ONFi compatible memory System-on-Chip. Bielsko-Biala/Poland, March 21st, 2011 - ...

In April 2017, its predecessor Toshiba Memory was spun off from Toshiba Corporation, the company that invented NAND flash memory in 1987. Kioxia is committed to uplifting the world with “memory ...

Long working hours might not just be bad for you, they could also be altering the structure of your brain, a new study suggests. The research was conducted by two scientists at South Korea’s ...

Abstract: This study presents a compact model for three-dimensional (3D) NAND flash memory that incorporates ferroelectric properties to enable accurate circuit-level simulations. The model, ...

State Key Laboratory of Electroanalytic Chemistry, Jilin Province Key Laboratory of Low Carbon Chemistry Power, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, ...

“And now that we have this structure, perhaps we can find ways to modulate its function.” For example, compounds that target the receptor could alter how natural sugars are sensed by taste ...

In the article, I specifically pointed out NAND's negative gross margins, and even though HBM continued to grow at a record pace, it wasn't enough to pull the company's overall gross margins ...