A power tip that discusses how to address highly integrated USB PD charger design constraints with a self-biasing circuit.

In addition, Vishay will provide a portfolio roadmap for 650 V to 1,700 V SiC MOSFETs with on-resistances ranging from 10 mΩ to 560 Ω. Vishay’s SiC platform is based on a proprietary MOSFET technology ...

Navitas Semiconductor has announced what it believes are the world’s first production-released 650 V bi-directional GaNFast ...