Phlux' ultra-low-noise infrared sensors can improve the performance of communications systems to enable up to 5x higher data ...
Researchers demonstrate scalable integration of graphene and GaN devices using van der Waals forces, enabling high-performance CMOS-compatible electronics.
A 4–420-GHz Distributed Amplifier MMIC in a 20-nm InGaAs-on-Si HEMT Technology With 11 ± 2 dB Gain
This sets a new BW record for ultrawideband amplifier MMICs. DA MMIC utilizes the Fraunhofer IAF 20gate-length InGaAs-on-Si high-electron-mobility transistor (HEMT) technology and features ten gain ...
Their analysis reveals a strong overlap between these two ranges, confirming that GaN MISHEMTs remain stable within the ...
The Honda & Sony Afeela 1 (pronounced Ah-Feel-a) is the first of several proposed vehicles coming from the two companies' recent partnership. After doing some research, the best way to describe ...
The Commission is sticking with its clean mobility targets, setting in stone the level of emissions new cars and vans can produce for 2025, 2030 and 2035. Currently, the goal is to progressively ...
DALLAS--(BUSINESS WIRE)--Teledyne Micropac, a leader in space-level microcircuit modules and components for mission-critical applications, today debuted a patent-pending, standard 3U VPX card ...
New high dynamic range and high frame rate InGaAs area image sensor module for hyperspectral imaging
With an integrated indium gallium arsenide (InGaAs) area image sensor allowing superior light sensitivity, these high-performance devices deliver high image quality, even in low-light conditions. Its ...
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