News

Compound Semiconductor1d
Infineon launches rad-hard GaN HEMTs
Infineon has announced the first of a new family of radiation hardened GaN HEMTs, fabricated at Infineon’s own foundry, based ...
IEEE3d
Temperature Associated Reliability Issues of Heterogeneous Gate Dielectric—Gate All Around—Tunnel FET
Abstract: In this paper, the temperature associated reliability issues of heterogeneous gate dielectric-gate all around-tunnel FET (HD GAA TFET) has been addressed, and the results are simultaneously ...
IEEE3d
Reliability under High Gate-Voltage Condition on SiC MOSFET Through Repeated Overcurrent
It is known that setting a higher gate voltage on MOSFETs can further reduce losses in power devices. However, a higher gate voltage also leads to an increase in saturation and short-circuit currents, ...
Fierce Electronics3d
Infineon radiation-hardened GaN transistors aim for space apps
Gallium nitride (GaN) transistors have radiation tolerance that makes them a good fit for a growing variety of space industry ...
RF Globalnet5d
Infineon Launches New Radiation Hardened GaN Transistors, Including One Of The First DLA JANS Certified GaN Device
Infineon Technologies AG today announced the first of a new family of radiation hardened Gallium Nitride (GaN) transistors, fabricated at Infineon’s own foundry, based on its proven CoolGan technology ...