ON Semiconductor has joined a multi partner programme at nanoelectronics research centre imec, to collaborate on the development of next generation Gallium Nitride (GaN) on silicon (Si) power devices.

Leuven, Belgium, and Cardiff, UK. imec has announced a strategic partnership on GaN-on-Si (gallium nitride-on-silicon) technology with IQE, ...

Bel Power demonstrated this architecture in 2011 (Figure 3). Figure 3 An improved totem pole PFC stage (Image courtesy of Bel Power) Finally, we replace the Silicon MOSFETs in the previous totem pole ...

GaN-on-silicon E-HEMT transistors are the choice for maximum performance, efficiency and cost-effective power supplies. Cost-effective driver technology enhances supply performance by simplifying ...

Following Type C meeting feedback from the U.S. FDA, Taysha is discontinuing development of TSHA-120 in GAN due to challenges with study design fe ...

Date Announced: 21 Jan 2011 Leuven (Belgium) – Dow Corning has formalized an agreement to enter the imec multi-partner industrial R&D program on GaN semiconductor materials and device technologies.

LEUVEN, Belgium---- ON Semiconductor, a premier global supplier of high performance silicon solutions for energy efficient electronics, has joined the multi-partner, industrial research and ...

Taysha Gene Therapies, Inc. Following Type C meeting feedback from the U.S. FDA, Taysha is discontinuing development of TSHA-120 in GAN due to challenges with study design feasibility for ...

ON Semiconductor Joins imec's GaN-on-Si Research Program LEUVEN, Belgium--(BUSINESS WIRE)-- ON Semiconductor (Nasdaq: ONNN), a premier global supplier of high performance silicon solutions for ...