A research team at NIMS has developed the world’s first n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). This breakthrough marks a significant step toward realizing CMOS ...

Abstract: This work investigated the physical limits of subthreshold swing (SS) in indium-tin-oxide (ITO) transistors with temperatures down to 20 K. As the temperature decreases, the ITO transistors ...

The Feynman generation and those that follow will likely adopt semiconductor nodes featuring gate-all-around (GAA) transistors – the next evolution in transistor technology after FinFET.

Researchers from the National University of Singapore (NUS) have demonstrated that a single, standard silicon transistor, the fundamental building block of microchips used in computers, smartphones ...

A paper published in Nature on Wednesday describes a way to get plain-old silicon transistors to behave a lot like an actual neuron. And unlike the dedicated processors made so far, it only ...

The same layered material can be made to behave as a superconductor, metal, semiconductor or insulator by using a transistor device developed by RIKEN physicists to tweak its electronic properties.

Associate Professor Mario Lanza and his team demonstrated a groundbreaking silicon transistor that mimics neural and synaptic behaviours, marking a significant breakthrough in neuromorphic computing.

Department of Electrical and Computer Engineering, University of Illinois at Urbana−Champaign, Urbana, Illinois 61801, United States ...

Ministry of Education Key Laboratory for Analytical Science of Food Safety and Biology, Fujian Provincial Key Laboratory of Analysis and Detection for Food Safety, College of Chemistry, Fuzhou ...

In a significant advancement for semiconductor technology, researchers at UC Santa Barbara have unveiled novel three-dimensional (3D) transistors utilizing two-dimensional (2D) semiconductors. Their ...