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Plasma technique doubles etch rate for 3D NAND flash memoryIn 3D NAND flash memory ... in creating these stacks involves carving holes into alternating layers of silicon oxide and silicon nitride. The holes can be etched by exposing the layered material ...
But when the task at hand is growing oxide layers on silicon chips in preparation for making your own integrated circuits, it turns out that the old Mark 1 eyeball is all you need. Alert readers ...
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Flash memory breakthrough could help supercharge NAND production for SSD, memory cards - but does it actually matter?Researchers find a faster way to etch deep holes for 3D NAND Plasma-based cryo-etching ... deep holes into alternating layers of silicon oxide and silicon nitride, and this has always been a ...
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