Medium-voltage CoolGaN G5 transistors from Infineon include a built-in Schottky diode to minimize dead-time losses.

The four-layer diode was the key to William Shockley's plan to revolutionize AT&T's phone system. It was a great device in theory, but not in practice -- at least not at the time when Shockley ...

Infineon Technologies AG has introduced what it claims is the world’s first gallium nitride (GaN) power transistor with an integrated Schottky diode.

Infineon Technologies has introduced the world’s first GaN power transistors with integrated Schottky diode for industrial ...

For hard-switched power topologies, Infineon is planning a 100V GaN transistors with a integrated Schottky diode. “Due to the lack of body diode in hard-switching applications, GaN-based topologies ...